Investigation of Structural, Electronic, and Magnetic Properties of Aluminum nitride Monolayer Doped with Rb and Cs

Abstract

Spintronics is the study of electron spin in electronics, fundamentally different from conventional charge-based electronics. In it, in addition to the charge of the electron, spin is also use as an additional degree of freedom. This means that a larger amount of data can be stored or transmitted. This research, conducted in 2020 in a laboratory at Kharazmi University in Tehran, examines the spintronic applications of a single layer of aluminum nitride (AlN) doped with rubidium (Rb) and cesium (Cs). Today, aluminum nitride (AlN) has gained attention as a viable material for spintronic applications due to its suitable electrical and thermal properties. Doping this material with Rb and Cs can lead to changes in its electrical and magnetic properties, thereby providing new capabilities in the fields of magnetic memory, sensors, and spintronic transistors. Initially, two-dimensional AlN monolayers were simulate, and in the next phase, a doped layer with rubidium and cesium was create at a concentration of 6.25 percent and examined. Using this method, the structural, electrical, and magnetic properties of the doped AlN layers were obtained, along with the effects of various concentrations of Rb and Cs on their spin behavior.

 The results indicate that this combination could enhance the performance of spintronic devices and contribute to the development of new technologies, particularly in the fabrication of high-speed non-volatile magnetic memories (permanent memories).